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The Journal of Vacuum Science and Technology B informed us that the article “Effect of vacuum thermal annealing to encapsulated graphene field effect transistors” by Konstantinos Alexandrou, Filippos Farmakis, Alexandros Arapis, Nikolaos Georgoulas, Yufeng Hao, James Hone and Ioannis Kymissis (J. Vac. Sci. Technol. B 34, 041805 (2016); http://dx.doi.org/10.1116/1.4952409) appeared in the MOST READ list of June!
The article in its summary states that an increased air stability of GFETs in ambient environments was achieved by employing both encapsulation and vacuum annealing techniques. The results highlight the importance of annealing time as a successful performance recovery method and emphasize the long-term stability of fabricated devices. A parylene-C damage mechanism is proposed as an explanation to the sudden Dirac point shift on devices subjected to 24 h annealing after prolonged air exposure.
Fig. 8. Dirac point voltage as a function of the exposure time in ambient conditions for SLG-FETs annealed for 3 and 24 h, respectively, in vacuum at 393 K. The line represents the best fit of the equation y = axb. © 2016 American Vacuum Society.