Thin Film Technology

MNT Lab’s aim is to correlate physical and electrical behavior of thin films and related devices with process parameters, to identify and to model the relevant mechanisms. Metals, semiconductors and insulators are under study. Last years, MNT Lab is also focused on 2D materials.

Thin film growth and device fabrication

With the support of MNT Lab clean room facility and tools such as PVD, LPCVD, spin-coaters, electrophoretic deposition, a large variety of materials can be deposited on various substrates.
In addition, MNT Lab is equipped with a 1-μm-resolution photolithography station that enables thin film devices fabrication, such as thin film transistors, diodes, capacitors, etc.

Materials and device characterization

A variety of electrical characterization methods including DLTS, Hall mobility, quantum efficiency and low-temperature (cryostat) probe station are used in order to characterize materials and devices.


Among others, applications such as Thin Film Transistors, Single Layer Graphene FET’s, photovoltaic cells and Schottky diodes are studied.

Research highlights

Single Layer Graphene FET’s

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Uncapped (a) and encapsulated (b) single layer GFETs.

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Dirac point Voltage of SLG-FET as a function of the environmental conditions.


Graphene oxide/silicon Schottky diodes

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Reduced Graphene Oxide / Silicon Schottky diode

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I-V response to dark and light


Solar cell applications

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Simulated current-voltage curves of tandem cell with low-iron and green glass substrate for various thicknesses (Simulation performed with the aid of SILVACO tools)

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Micro- and nanostructured silicon with the aid of Metal Assisted Chemical Etching and Standard UV Photolithography for solar cell applications.